Solutions of low-index and high-index contrast optical waveguide by using full-vectorial FEM

For any photonic device simulation, accuracy of numerical solution not only depends on methods being used but also on the discretization parameters used in the numerical methods. As solution accuracy may also depend on index contrast used in such photonic devices, the characteristics of a low-index contrast Germanium (Ge) doped Silica and a high-index contrast Silicon (Si) Nanowire Waveguides are analyzed, evaluated and benchmarked. The advantages of using infinite element to deal with boundary condition problem are also presented.