DocumentCode :
3747252
Title :
Elastic properties of zincblende III-nitrides: A first-principles study
Author :
C. P. S. Gayathri;D. V. Satyanand;B. S. Kiran;T. N. Sravya;Bhanu P. Singh;V. Kumar
Author_Institution :
Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004 Jharkhand, India
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
We have performed first-principle calculations to calculate elastic stiffness constants (C11, C12, C44) and bulk modulus (B) of AlN, GaN and InN semiconductors in the zinc blende structure. These properties are calculated using an ab initio pseudo potential method based on density functional theory (DFT) with the generalized gradient approximation (GGA) for the exchange-correlation functional. The Calculated values are in fair agreement with the values reported by earlier workers.
Keywords :
"Gallium nitride","Aluminum nitride","III-V semiconductor materials","Zinc","Electric potential","Density functional theory","Light emitting diodes"
Publisher :
ieee
Conference_Titel :
Microwave and Photonics (ICMAP), 2015 International Conference on
Print_ISBN :
978-1-4673-6897-1
Type :
conf
DOI :
10.1109/ICMAP.2015.7408762
Filename :
7408762
Link To Document :
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