Title :
Effect of finger spacing on the gain of a silicon avalanche photodetector compatible with CMOS technology
Author :
Kanishka Majumder;Paulami Rakshit;N. R. Das
Author_Institution :
Academy of Technology, West Bengal University of Technology, G. T. Road, Adisaptagram, Aedconagar, Hooghly-712121, India
Abstract :
We present a theoretical study of the gain of a CMOS compatible thin submicron Si-CMOS p-i-n avalanche photodetector (APD) suitable for high-speed, low-voltage operation. A 2-D model is used to estimate the avalanche build-up of carriers in the depleted region considering the dead-space effect. The model is also considered the effects of diffusion of carriers from the substrate region. The results on the gain are shown as a function of finger spacing and bias.
Keywords :
"Silicon","CMOS integrated circuits","Fingers","Semiconductor device modeling","Photodetectors","Mathematical model","CMOS technology"
Conference_Titel :
Microwave and Photonics (ICMAP), 2015 International Conference on
Print_ISBN :
978-1-4673-6897-1
DOI :
10.1109/ICMAP.2015.7408774
