Title :
Experimental study on carrier transport properties in extremely-thin body Ge-on-insulator (GOI) p-MOSFETs with GOI thickness down to 2 nm
Author :
Xiao Yu;Jian Kang;Mitsuru Takenaka;Shinichi Takagi
Author_Institution :
The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
Abstract :
In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the hole mobility and the GOI thickness dependence over a wide range of GOI thickness down to 2 nm are systematically analyzed and understood from the viewpoint of the scattering mechanisms, for the first time.
Keywords :
"MOSFET","Logic gates","Scattering","Silicon","Temperature dependence","Fabrication","Fluctuations"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409611
