Title :
Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform
Author :
S. Wirths;R. Geiger;C. Schulte-Braucks;N. von den Driesch;D. Stange;T. Zabel;Z. Ikonic;J.-M. Hartmann;S. Mantl;H. Sigg;D. Gr?tzmacher;D. Buca
Author_Institution :
PGI 9 and JARA-FIT, Forschungszentrum Juelich, Germany
Abstract :
We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 μm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively.
Keywords :
"Photonic band gap","Strain","Lasers","Optical device fabrication","Optical resonators","Cavity resonators","Temperature measurement"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409615
