• DocumentCode
    3748088
  • Title

    Ab initio study of avalanche breakdown in diamond for power device applications

  • Author

    Y. Kamakura;T. Kotani;K. Konaga;N. Minamitani;G. Wakimura;N. Mori

  • Author_Institution
    Division of Electrical, Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
  • fYear
    2015
  • Abstract
    We investigate the high-field carrier transport in diamond using a full band Monte Carlo method based on ab initio calculations. The calculated breakdown field and breakdown voltage show good agreement with experimental data of n+p- one-sided abrupt junctions with the acceptor density <; 1017 cm-3. The evaluated power device figure-of-merit of diamond suggests its advantage for high temperature applications.
  • Keywords
    "Decision support systems","Diamonds"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409632
  • Filename
    7409632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748088