Enabling low power BEOL compatible monolithic 3D+ nanoelectronics for IoTs using local and selective far-infrared ray laser anneal technology

Local and selective far-infrared ray laser annealing (FIR-LA) process with very short heating duration (<;100μs) and low substrate temperature (<;400°C) enables sequentially stacked gate-first nanowire FETs (NWFETs), including 3D⁺ Si NWFET and poly-Ge junctionless (JL) NWFET, and BEOL compatible monolithic 3D⁺ nanoelectronics. The 3D⁺ Si NWFETs, demonstrated by green nano-second laser crystallization (GNS-LC) and FIR-LA processes exhibit steep subthreshold swing (<;90mV/dec.) and high driving current (n-type: 310μA/μm and p-type: 220μA/μm). The 7nm poly-Ge JLNWFET shows high I_on/I_off ratio (>5×10⁴) and small DIBL. Furthermore, the thus fabricated low driving voltage 6T SRAM shows a static noise margin (SNM) of 130 mV at Vd=0.4V enabling the low power and low cost 3D⁺IC for internet of things (IoTs).