Title :
A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems
Author :
K.-Y. Roy Wong;M.-H. Kwan;F.-W. Yao;M.-W. Tsai;Y.-S. Lin;Y.-C. Chang;P.-C. Chen;R.-Y. Su;J.-L. Yu;F.-J. Yang;G. P. Lansbergen;C.-W. Hsiung;Y.-A. Lai;K.-L. Chiu;C.F. Chen;M.-C. Lin;H.-Y. Wu;C.-H. Chiang;S.-D. Liu;H.-C. Chiu;P.-C. Liu;C.-M. Chen;C.-Y. Yu;C.
Author_Institution :
Power IC Program, Analog / RF & Specialty Technology Division (R&D), TSMC, Hsin-Chu, Taiwan
Abstract :
CMOS-compatible 100 V / 650 V enhancement-mode high electron mobility transistors (E-HEMTs) and 650 V depletion-mode MISFET (D-MISFET) are fabricated on 6-inch GaN-on-Si wafers. These devices show excellent power converter switching performances. Both 100 V and 650 V E-HEMTs had passed industrial reliability qualifications. The importance of bulk leakage, interface quality and gate trapping in dynamic on-resistance is figured out. The device with optimized processes shows a significant reduction of the dynamic on-resistance degradation.
Keywords :
"Charge carrier processes","Logic gates","Gallium nitride","Capacitance","HEMTs","MODFETs","Schottky diodes"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409663
