Title :
Effects of interlayer interaction in van der Waals layered black phosphorus for sub-10 nm FET
Author :
Kai-Tak Lam;Sheng Luo;Baokai Wang;Chuang-Han Hsu;Arun Bansil;Hsin Lin;Gengchiau Liang
Author_Institution :
Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117583
Abstract :
Current characteristics of few-layer BP FETs with 7-nm channel were calculated numerically using Wannier function Hamiltonians with accurate interlayer coupling terms. The potentials in each layer were different for thicker BP devices where large OFF-state current is observed, necessitating a double-gated MOSFET for optimal performance. Elastic acoustic phonon scattering reduced ION by 42%.
Keywords :
"MOSFET","Logic gates","Electric potential","Performance evaluation","Phonons","Scattering","Acoustics"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409681
