• DocumentCode
    3748150
  • Title

    Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs

  • Author

    R. Pandey;N. Agrawal;V. Chobpattana;K. Henry;M. Kuhn;H. Liu;M. Labella;C. Eichfeld;K. Wang;J. Maier;S. Stemmer;S. Mahapatra;S. Datta

  • Author_Institution
    The Pennsylvania State University, University Park, PA-16802, USA
  • fYear
    2015
  • Abstract
    We present reliability analysis of the two most critical interfaces in III-V Heterojunction Tunnel FET (HTFET) design: (1) Tunnel Heterojunction is characterized in three-dimensional atomic scale resolution using Atom Probe Tomography. We explore the impact of tunnel junction abruptness and source dopant fluctuations on HTFET performance; (2) Extremely scaled Hi-K gate dielectric (sub-0.8 nm EOT: HfO2, HfO2-ZrO2 bilayer, and ZrO2)/ III-V channel interface is evaluated using Positive Bias Temperature Instability (PBTI) measurements. HfO2 based HTFET exhibits superior PBTI performance over ZrO2 based HTFET and shows lifetime improvement over III-V FinFET.
  • Keywords
    "Decision support systems","Atomic layer deposition","Silicon","Atomic beams","Nanoscale devices","Detectors","Atomic measurements"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409694
  • Filename
    7409694
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748150