On and off state hot carrier reliability in junctionless high-K MG gate-all-around nanowires

Hot carrier (HC) reliability is investigated at `on´ and `off´ state stress conditions in junctionless (JL) gate-all-around HK/MG nanowires. We discuss the reason of improved HC reliability in JL nanowire compared to the inversion-mode (IM) nanowire at `on´ state stress condition. Then we present the impact of `off´ state stress in the JL nanowire, considering that a high gate oxide field is applied at the `off´ state. Additionally, the improved sub-threshold swing (SS) after HC stress in some JL nanowires is discussed.