Title :
Time dependent threshold-voltage fluctuations in NAND flash memories: From basic physics to impact on array operation
Author :
Akira Goda;Carmine Miccoli;Christian Monzio Compagnoni
Author_Institution :
Micron Technology, 8000 S. Federal Way, Boise, ID 83716, USA
Abstract :
Introduction: Random telegraph noise (RTN) during read and charge detrapping during data retention cause time dependent threshold voltage (VT) fluctuations in NAND flash memories [1-9]. This paper reviews and discusses the physics of these phenomena and the impact on NAND array reliability based on characteristics of aggressively scaled 2D planar NAND cells [10][11]. The discussion is further extended to 3D NAND.
Keywords :
"Three-dimensional displays","Fluctuations","Logic gates","Programming","Electron devices","Delays","Temperature distribution"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409699
