• DocumentCode
    3748155
  • Title

    Time dependent threshold-voltage fluctuations in NAND flash memories: From basic physics to impact on array operation

  • Author

    Akira Goda;Carmine Miccoli;Christian Monzio Compagnoni

  • Author_Institution
    Micron Technology, 8000 S. Federal Way, Boise, ID 83716, USA
  • fYear
    2015
  • Abstract
    Introduction: Random telegraph noise (RTN) during read and charge detrapping during data retention cause time dependent threshold voltage (VT) fluctuations in NAND flash memories [1-9]. This paper reviews and discusses the physics of these phenomena and the impact on NAND array reliability based on characteristics of aggressively scaled 2D planar NAND cells [10][11]. The discussion is further extended to 3D NAND.
  • Keywords
    "Three-dimensional displays","Fluctuations","Logic gates","Programming","Electron devices","Delays","Temperature distribution"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409699
  • Filename
    7409699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748155