DocumentCode
3748161
Title
Present status and future prospects of nano-carbon interconnect technologies for LSIs
Author
Yuji Awano
Author_Institution
Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Japan
fYear
2015
Abstract
We report on the present status and future prospect of nano-carbon interconnect technologies, consisting of carbon nanotube (CNT) vertical interconnects (vias) and graphene horizontal interconnects, mainly in terms of material growth and fabrication process technologies to meet the requirement of process compatibility with a conventional Si LSI. Their superior electrical properties for replacing Cu interconnects are demonstrated.
Keywords
"Graphene","Conductivity","Silicon","Resistance","Carbon nanotubes","Fabrication","Large scale integration"
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN
2156-017X
Type
conf
DOI
10.1109/IEDM.2015.7409705
Filename
7409705
Link To Document