Title :
Present status and future prospects of nano-carbon interconnect technologies for LSIs
Author_Institution :
Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Japan
Abstract :
We report on the present status and future prospect of nano-carbon interconnect technologies, consisting of carbon nanotube (CNT) vertical interconnects (vias) and graphene horizontal interconnects, mainly in terms of material growth and fabrication process technologies to meet the requirement of process compatibility with a conventional Si LSI. Their superior electrical properties for replacing Cu interconnects are demonstrated.
Keywords :
"Graphene","Conductivity","Silicon","Resistance","Carbon nanotubes","Fabrication","Large scale integration"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409705