Title :
High-performance photonic BiCMOS process for the fabrication of high-bandwidth electronic-photonic integrated circuits
Author :
D. Knoll;S. Lischke;R. Barth;L. Zimmermann;B. Heinemann;H. Rucker;C. Mai;M. Kroh;A. Peczek;A. Awny;C. Ulusoy;A. Trusch;A. Kruger;J. Drews;M. Fraschke;D. Schmidt;M. Lisker;K. Voigt;E. Krune;A. Mai
Author_Institution :
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Abstract :
An advanced photonic BiCMOS process is demonstrated capable, on the receiver side, for 100 Gb/s optical line rate. Key components of this process are monolithically integrated wave-guide Ge photodiodes showing more than 70 GHz bandwidth and 1 A/W responsivity, and SiGe HBTs with fT/fmax values of 240/290 GHz.
Keywords :
"Photonics","BiCMOS integrated circuits","Photodiodes","P-i-n diodes","Bandwidth","Silicon germanium","Receivers"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409706
