• DocumentCode
    3748164
  • Title

    State-of-the-art GaN vertical power devices

  • Author

    Tetsu Kachi

  • Author_Institution
    Toyota Central R&D Labs., Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192, Japan
  • fYear
    2015
  • Abstract
    Recent progress and developing issues of GaN vertical power devices are reviewed. Quality improvement of GaN substrates activates the research. 2kV level pn diodes and 1.5kV level vertical transistors have been reported recently. However, some issues to be solved still exist to show high ability of GaN.
  • Keywords
    "Gallium nitride","Substrates","Leakage currents","Epitaxial layers","Logic gates","Surface treatment","MOSFET"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409708
  • Filename
    7409708
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748164