Title :
State-of-the-art GaN vertical power devices
Author_Institution :
Toyota Central R&D Labs., Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192, Japan
Abstract :
Recent progress and developing issues of GaN vertical power devices are reviewed. Quality improvement of GaN substrates activates the research. 2kV level pn diodes and 1.5kV level vertical transistors have been reported recently. However, some issues to be solved still exist to show high ability of GaN.
Keywords :
"Gallium nitride","Substrates","Leakage currents","Epitaxial layers","Logic gates","Surface treatment","MOSFET"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409708
