• DocumentCode
    3748168
  • Title

    From epitaxy to converters topologies what issues for 200 mm GaN/Si?

  • Author

    L. Di Cioccio;E. Morvan;M. Charles;P. Perichon;A. Torres;F. Ayel;D. Bergogne;Y. Baines;M. Fayolle;R. Escoffier;W. Vandendaele;D. Barranger;G. Garnier;L. Mendizabal;B. Thollin;M. Plissonnier

  • Author_Institution
    CEA, LETI, Minatec Campus F-38054 Grenoble, France
  • fYear
    2015
  • Abstract
    Energy is one of the main societal challenges of the 21th century. With the growth of population and cities, CO2 emission reduction, efficiency improvements especially in transportation modes will have to be enhanced. Cost will the main driver of power devices. This paper reviews the developments at CEA-Leti in power electronics. A complete GaN on 200 mm line has been implemented. For each stage of device realization a discussion of the issues will be done.
  • Keywords
    "Logic gates","HEMTs","MODFETs","Gallium nitride","Silicon","Topology","Switches"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409712
  • Filename
    7409712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748168