Title :
From epitaxy to converters topologies what issues for 200 mm GaN/Si?
Author :
L. Di Cioccio;E. Morvan;M. Charles;P. Perichon;A. Torres;F. Ayel;D. Bergogne;Y. Baines;M. Fayolle;R. Escoffier;W. Vandendaele;D. Barranger;G. Garnier;L. Mendizabal;B. Thollin;M. Plissonnier
Author_Institution :
CEA, LETI, Minatec Campus F-38054 Grenoble, France
Abstract :
Energy is one of the main societal challenges of the 21th century. With the growth of population and cities, CO2 emission reduction, efficiency improvements especially in transportation modes will have to be enhanced. Cost will the main driver of power devices. This paper reviews the developments at CEA-Leti in power electronics. A complete GaN on 200 mm line has been implemented. For each stage of device realization a discussion of the issues will be done.
Keywords :
"Logic gates","HEMTs","MODFETs","Gallium nitride","Silicon","Topology","Switches"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409712
