Title :
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications
Author :
G. Piccolboni;G. Molas;J. M. Portal;R. Coquand;M. Bocquet;D. Garbin;E. Vianello;C. Carabasse;V. Delaye;C. Pellissier;T. Magis;C. Cagli;M. Gely;O. Cueto;D. Deleruyelle;G. Ghibaudo;B. De Salvo;L. Perniola
Author_Institution :
CEA, LETI, Minatec Campus, F-38054 Grenoble, France
Abstract :
Combining Resistive RAM concept with Vertical NAND technology and design, Vertical RRAM (VRRAM) was recently proposed as a cost-effective and extensible technology for future mass data storage applications [1]. 3D RRAM based neural networks were also proposed to emulate the potentiation and depression of a synapse [2], but more complex circuits were not discussed. In previous works [3-4], various RRAM based neuromorphic circuits were proposed and investigated, using planar devices.
Keywords :
"Resistance","Switches","Correlation","Neuromorphics","Neural networks","Dispersion","Tin"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409717
