Title :
ZnO thin film transistors for more than just displays
Author :
Haoyu U. Li;J. Israel Ramirez;Kaige G. Sun;Yiyang Gong;Yuanyuan V. Li;Thomas N. Jackson
Author_Institution :
Center for Thin Film Devices and Materials Research Institute, Department of Electrical Engineering, Penn State University, University Park, PA 16802, USA
Abstract :
We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we have fabricated single-gate, double-gate, and trilayer ZnO TFTs with good performance and stability. We have also fabricated TFTs and circuits on thin (few μm thick) solution-cast polymeric substrates that can be flexed to small radius for thousands of cycles.
Keywords :
"Zinc oxide","II-VI semiconductor materials","Thin film transistors","Logic gates","Substrates","Aluminum oxide","Stress"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409736
