Title :
Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations
Author :
S. W. Pae;H. C. Sagong;C. Liu;M. J. Jin;Y. H. Kim;S. J. Choo;J. J. Kim;H. J. Kim;S. Y. Yoon;H. W. Nam;H. W. Shim;S. M. Park;J. K. Park;S C. Shin;J. W. Park
Author_Institution :
Quality & Reliability, System LSI division, Samsung Electronics Co. Ltd., Yongin-City, Gyeonggi-Do, Korea 446-771
Abstract :
We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product design and qualifications. We show that along with increased AFs and optimized product HTOL stress conditions, 5-10x more efficiency in time has been achieved. In addition, external mechanical strain on Fin reliability will be discussed.
Keywords :
"Human computer interaction","Stress","Aging","Integrated circuit reliability","Transistors","MOS devices"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409744
