DocumentCode
3748201
Title
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
Author
T. Ando;T. Yamashita;S. Fan;I. Ok;R. Sathiyanarayanan;R. Pandey;S. Khan;A. Dasgupta;A. Madan;Q. Yuan;M. Chace;P. DeHaven;H. Bu;V. Narayanan
Author_Institution
IBM T. J. Watson Research Center, 1101 Kitchawan Road, Rt. 134, Yorktown Heights, NY 10598, USA
fYear
2015
Abstract
We identified unique device width and length dependencies of Vt for FinFET Replacement Metal Gate (RMG). Choice of fill metal is important to obtain a flat Vt-Wdes trend. We proposed a new model for Vt-Lg roll-up for High-k last RMG and demonstrated a flat Vt-Lg trend via optimization of High-k and MOL films based on the understanding.
Keywords
"High K dielectric materials","Market research","Silicon compounds","Hafnium compounds","FinFETs","Films"
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN
2156-017X
Type
conf
DOI
10.1109/IEDM.2015.7409747
Filename
7409747
Link To Document