Title :
Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V
Author :
Jiro Ida;Takayuki Mori;Yousuke Kuramoto;Takashi Horii;Takahiro Yoshida;Kazuma Takeda;Hiroki Kasai;Masao Okihara;Yasuo Arai
Author_Institution :
Division of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-850 Japan
Abstract :
We propose and demonstrate a super steep Subthreshold Slope (SS) new type SOI FET with a PN-body tied structure. It has a symmetry source and drain (S/D) structure. The device shows a super steep SS (<;6mV/dec) over 3 decades of the drain current with an ultralow drain voltage down to 0.1V. It also shows a low leakage current (below 1pA/um), a good Id-Vd characteristic and a negligible hysteresis characteristic.
Keywords :
"Voltage measurement","Current measurement","Logic gates","MOS devices","Thyristors","Field effect transistors","Hysteresis"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409761
