Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond

This paper demonstrates the co-optimization of all critical device parameters of perpendicular magnetic tunnel junctions (pMTJ) in 1 Gbit arrays with an equivalent bitcell size of 22 F² at the 28 nm logic node for embedded STT-MRAM. Through thin-film tuning and advanced etching of sub-50 nm (diameter) pMTJ, high device performance and reliability were achieved simultaneously, including TMR = 150 %, H_c > 1350 Oe, H_eff <; 100 Oe, Δ = 85, I_c (35 ns) = 94 μA, V_breakdown = 1.5 V, and high endurance (> 1012 write cycles). Reliable switching with small temporal variations (<; 5 %) was obtained down to 10 ns. In addition, tunnel barrier integrity and high temperature device characteristics were investigated in order to ensure reliable STT-MRAM operation.