DocumentCode :
3748225
Title :
STT-MRAM with double magnetic tunnel junctions
Author :
G. Hu;J. H. Lee;J. J. Nowak;J. Z. Sun;J. Harms;A. Annunziata;S. Brown;W. Chen;Y. H. Kim;G. Lauer;L. Liu;N. Marchack;S. Murthy;E. J. O´Sullivan;J. H. Park;M. Reuter;R. P. Robertazzi;P. L. Trouilloud;Y. Zhu;D. C. Worledge
Author_Institution :
IBM-Micron MRAM Alliance, IBM TJ Watson Research Center, Yorktown Heights, New York
fYear :
2015
Abstract :
We report switching performance of perpendicularly magnetized Spin-Transfer Torque MRAM (STT-MRAM) devices with double tunnel barriers and two reference layers. We show that stacks with double tunnel barriers improve the switching efficiency (Eb/Ic0) by 2x, when compared to similar stacks with a single tunnel barrier. Switching efficiency up to 10 kBT/uA was observed in single devices. A large operating window, Vbreakdown-Vclons ~ 0.7 V was achieved for 40nm devices, compared to 0.2V in single tunnel barrier devices.
Keywords :
"Junctions","Switches","Magnetic tunneling","Torque","Tunneling magnetoresistance","Resistance","Magnetic switching"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
Type :
conf
DOI :
10.1109/IEDM.2015.7409772
Filename :
7409772
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3748225
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