DocumentCode
3748233
Title
2D layered materials: From materials properties to device applications
Author
Peida Zhao;Sujay Desai;Mahmut Tosun;Tania Roy;Hui Fang;Angada Sachid;Matin Amani;Chenming Hu;Ali Javey
Author_Institution
Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
fYear
2015
Abstract
An overview of material properties and the current state of electronic devices based on 2D layered materials is presented. Atomic scale smoothness, varying band alignment and sizeable bandgaps in the single layer limit make this class of materials very interesting for optoelectronic applications. Scaling effects, doping techniques, contacts and strain engineering of 2D materials are discussed. In addition, important advancements in 2D material electronic devices, for example the all-2D field effect transistor (FET), heterojunction devices, and tunnel diode are highlighted.
Keywords
"Doping","Strain","Logic gates","Semiconductor diodes","Field effect transistors","Silicon","Metals"
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN
2156-017X
Type
conf
DOI
10.1109/IEDM.2015.7409780
Filename
7409780
Link To Document