• DocumentCode
    3748233
  • Title

    2D layered materials: From materials properties to device applications

  • Author

    Peida Zhao;Sujay Desai;Mahmut Tosun;Tania Roy;Hui Fang;Angada Sachid;Matin Amani;Chenming Hu;Ali Javey

  • Author_Institution
    Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
  • fYear
    2015
  • Abstract
    An overview of material properties and the current state of electronic devices based on 2D layered materials is presented. Atomic scale smoothness, varying band alignment and sizeable bandgaps in the single layer limit make this class of materials very interesting for optoelectronic applications. Scaling effects, doping techniques, contacts and strain engineering of 2D materials are discussed. In addition, important advancements in 2D material electronic devices, for example the all-2D field effect transistor (FET), heterojunction devices, and tunnel diode are highlighted.
  • Keywords
    "Doping","Strain","Logic gates","Semiconductor diodes","Field effect transistors","Silicon","Metals"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409780
  • Filename
    7409780