مرکز منطقه ای اطلاع رساني علوم و فناوري - van der Waals junctions of layered 2D materials for functional devices

DocumentCode :

3748236

Title :

van der Waals junctions of layered 2D materials for functional devices

Author :

Tomoki Machida;Rai Moriya;Miho Aral;Yohta Sata;Takehiro Yamaguchi;Naoto Yabuki;Sei Morikawa;Satoru Masubuchi;Keiji Ueno

Author_Institution :

Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan

fYear :

2015

Abstract :

We fabricated van der Waals (vdW) junctions of two-dimensional (2D) crystals using mechanical exfoliation and transfer technique of atomic layers. By connecting cleaved flakes of Fe_0.25TaS₂, van der Waals magnet tunnel junction was constructed, exhibiting tunneling magnetoresistance effect. In addition, large current modulation with ON-OFF current ratio exceeding 10⁵ and ON current density of 10⁴ A/cm² was achieved in metal/MoS₂/graphene vertical FET. Josephson effect was demonstrated in van der Waals NbSe₂/NbSe₂ junctions.

Keywords :

"Junctions","Crystals","Josephson junctions","Magnetoresistance","Modulation","Field effect transistors","Temperature measurement"

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting (IEDM), 2015 IEEE International

Electronic_ISBN :

2156-017X

Type :

conf

DOI :

10.1109/IEDM.2015.7409783

Filename :

7409783

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3748236