• DocumentCode
    3748239
  • Title

    Physical-based analytical model of flexible a-IGZO TFTs accounting for both charge injection and transport

  • Author

    M. Ghittorelli;F. Torricelli;J.-L. Van Der Steen;C. Garripoli;A. Tripathi;G. H. Gelinck;E. Cantatore;Zs. M. Kovacs-Vajna

  • Author_Institution
    Dept. of Information Engineering, University of Brescia, Brescia, Italy
  • fYear
    2015
  • Abstract
    Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization.
  • Keywords
    "Thin film transistors","Logic gates","Analytical models","Current measurement","Stability analysis","Semiconductor device measurement"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409786
  • Filename
    7409786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748239