Title :
Physical-based analytical model of flexible a-IGZO TFTs accounting for both charge injection and transport
Author :
M. Ghittorelli;F. Torricelli;J.-L. Van Der Steen;C. Garripoli;A. Tripathi;G. H. Gelinck;E. Cantatore;Zs. M. Kovacs-Vajna
Author_Institution :
Dept. of Information Engineering, University of Brescia, Brescia, Italy
Abstract :
Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization.
Keywords :
"Thin film transistors","Logic gates","Analytical models","Current measurement","Stability analysis","Semiconductor device measurement"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409786
