• DocumentCode
    3748243
  • Title

    Field-effect control of ions beyond debye-screening limit in nanofluidic transistors

  • Author

    Qiushi Ran;Yang Liu;Robert W. Dutton

  • Author_Institution
    Center for Integrated Systems, Stanford University, Stanford, CA, 94305, USA
  • fYear
    2015
  • Abstract
    We investigate the field-effect control of ions in nanofluidic transistors (NFTs) with characteristic channel size (~100 nm) significantly larger than the system´s Debye Length (~10 nm). These 100 nm NFTs achieve an ionic current modulation ratio of ~2.5, demonstrating better performance than the state-of-the-art 20 nm NFTs. The result attests a new operating regime beyond the Debye-screening limit. The relaxed constraint on channel size offers advantages in device manufacturing, testing, and reliability. It also opens up new applications in biological sensing and sample preparation.
  • Keywords
    "Logic gates","Electrodes","Current measurement","Ions","Voltage measurement","Modulation","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409791
  • Filename
    7409791