Title :
Single suspended InGaAs nanowire MOSFETs
Author :
Cezar B. Zota;Lars-Erik Wernersson;Erik Lind
Author_Institution :
Department of Electrical and Information Technology, Lund University, Box 118, Lund, Sweden
Abstract :
We report on In0.85Ga0.15As NWFETs utilizing a single suspended (above the substrate) selectively grown nanowire as the channel. These devices exhibit gm = 3.3 mS/μm and subthreshold slope SS = 118 mV/dec, both at VDS = 0.5 V and LG = 60 nm. This is the highest reported value of gm for all MOSFETs and HEMTs, as well as a strong combination of on and off performance, with Q = gm/SS = 28, the highest for non-planar III-V MOSFETs.
Keywords :
"Substrates","Indium gallium arsenide","Indium phosphide","III-V semiconductor materials","Nanoscale devices","Logic gates","Metals"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409808
