• DocumentCode
    3748275
  • Title

    Suspended AlGaN/GaN membrane devices with recessed open gate areas for ultra-low-power air quality monitoring

  • Author

    Peter Offermans;Ahmed Si-Ali;Greja Brom-Verheyden;Karen Geens;Silvia Lenci;Marleen Van Hove;Stefaan Decoutere;Rob Van Schaijk

  • Author_Institution
    imec/Holst Centre, Eindhoven, The Netherlands
  • fYear
    2015
  • Abstract
    We have developed a novel gas sensor platform for ultra-low-power air quality monitoring based on suspended AlGaN/GaN membranes fabricated on 8 inch Si(111) wafers. Due to precise sensing area recessing, the device shows excellent sensitivity to NO2, a major air pollutant, allowing the detection of single-ppb steps in the gas concentration. A key feature of the device is the small interference from humidity. We show extension of the platform to NH3, H2 and CO2 detection.
  • Keywords
    "Aluminum gallium nitride","Wide band gap semiconductors","Sensitivity","Sensors","HEMTs","Heating","Humidity"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409823
  • Filename
    7409823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748275