Title :
Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs
Author :
P. Moens;A. Banerjee;M. J. Uren;M. Meneghini;S. Karboyan;I. Chatterjee;P. Vanmeerbeek;M. C?sar;C. Liu;A. Salih;E. Zanoni;G. Meneghesso;M. Kuball;M. Tack
Author_Institution :
ON Semiconductor Oudenaarde, Belgium
Abstract :
The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.
Keywords :
"Stress","HEMTs","MODFETs","Gallium nitride","Acceleration","Substrates","Degradation"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409831
