III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances

Development of III-nitride high-voltage power devices is still challenged by deep traps that are inevitable in state-of-the-art AlGaN/GaN-on-Si epitaxial heterostructures. In this work, we report a heterojunction field-effect transistor featuring a photonic-ohmic drain, i.e. PODFET, on conventional AlGaN/GaN-on-Si power electronics platform. Photons are synchronously generated with the switching channel current, and they are capable of effectively pumping electrons from the deep surface/bulk traps during each switching cycle. Consequently, the dynamic ON-resistance of the PODFET is significantly reduced compared to that of a conventional ohmic-drain FET.