DocumentCode
3748304
Title
Characterization methodology of a millimeter-wave 65nm CMOS PA dedicated to 60GHz WPAN standard
Author
Sofiane Aloui;Nicolas Delaunay;Eric Kerherve;Nathalie Deltimple;Robert Plana;Didier Belot
Author_Institution
IMS laboratory, UMR CNRS 5218, University of Bordeaux, 33405 Talence Cedex, France
fYear
2010
Firstpage
65
Lastpage
68
Abstract
A millimeter-wave PA (Power Amplifier) based on a 65nm CMOS technology from STMicroelectronics has been designed. It is optimized to deliver the maximum OCP1 (Output Compression Point) equal to 12dBm. The targeted feature is the unlicensed band around 60GHz suitable for Wireless Personal Area Network application (WPAN). Considering that constraints, one-tone simulations are not sufficient to characterize the linearity performances of the PA in its real conditions of use. Consequently, the high frequency memory effect is firstly highlighted by performing two-tone simulations. Linearity figures of merit are discussed applying an OFDM (Orthogonal Frequency Devising Multiplexing) modulated signal. The PA offers an ACPR of 35dB, an EVM of 20%and compresses at 9dBm.
Keywords
"Standards","Power generation","Peak to average power ratio","Linearity","Harmonic analysis","Wireless personal area networks"
Publisher
ieee
Conference_Titel
Circuits and Systems (LASCAS), 2010 First IEEE Latin American Symposium on
Type
conf
DOI
10.1109/LASCAS.2010.7410221
Filename
7410221
Link To Document