• DocumentCode
    3749384
  • Title

    Effects of contact roughness and trapped free space on characteristics of RF-MEMS capacitive shunt switches

  • Author

    Ali Ghaffari Nejad;Javad Yavand Hasani

  • Author_Institution
    School of Electrical Engineering, Iran University of Science and Technology
  • fYear
    2015
  • Firstpage
    369
  • Lastpage
    372
  • Abstract
    Down-state capacitance of RF-MEMS switches is considerably affected by the interface irregularities and the free space trapped between the contacting surfaces of a MEMS switch. Self-affine fractal model can be used to describe different growth and deposition techniques like thermal evaporation and MBE. Based on this concept, we have developed a model that incorporates effects of the trapped free space into classic equations describing electro-mechanical behavior of a capacitive MEMS switch.
  • Keywords
    "Capacitance","Microswitches","Rough surfaces","Surface roughness","Contacts","Mathematical model","Dielectrics"
  • Publisher
    ieee
  • Conference_Titel
    MTT-S International Microwave and RF Conference (IMaRC), 2015 IEEE
  • Electronic_ISBN
    2377-9152
  • Type

    conf

  • DOI
    10.1109/IMaRC.2015.7411414
  • Filename
    7411414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3749384