Title :
Device characterization and modeling for Terahertz CMOS design
Author :
Minoru Fujishima
Author_Institution :
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-hiroshima, Japan
Abstract :
More and more CMOS integrated circuits operating at terahertz (≥ 0.1 THz) frequencies have been reported recently. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews our recent progress in device characterization and modeling for terahertz CMOS design. Finally, as an application example of terahertz CMOS design, low-power high-speed wireless data transfer at 11 Gb/s and 20 pJ and a 7-pJ/bit ultra-low-power transceiver chipset are presented.
Keywords :
"CMOS integrated circuits","Wireless communication","Amplitude shift keying","Integrated circuit modeling","Transceivers","Semiconductor device modeling","MOSFET"
Conference_Titel :
MTT-S International Microwave and RF Conference (IMaRC), 2015 IEEE
Electronic_ISBN :
2377-9152
DOI :
10.1109/IMaRC.2015.7411451
