Physical characterization of different dielectrics for thin film capacitors in gaAs MMIC´s

It is clear from this study that the geometry of a M.I.M. capacitor is important in determining the reliability of the component. The means of deposition used for the dielectrics is obviously not well suited to Si3N4, and indeed other of the dielectrics considered may show improved characteristics when deposited by other methods, for example anodic oxidation of Ta for Ta2O5 {1}. A continuation of this study will consider other types of deposited film, and together with more measurements of fundamental parameters involved, will aim to improve the understanding of the processes controlling the behaviour reported here.