A 50-Ohm semi-enclosed stripline design in a 90-nm CMOS process for silicon-based monolithic microwave wave integrated circuits

This paper reports the investigation of constructing 50-ohm microwave transmission lines in a commercial 90-nm CMOS process with multi-level metallization. A semi-enclosed stripline design based on the conventional microwave stripline structure is proposed for silicon monolithic microwave integrated circuits. The design has been verified by electromagnetic simulation with a low insertion loss of 2.5 dB/mm at 60 GHz and a reflection coefficient of about -30 dB. The proposed design has a compact structure occupying less than 20 μm in width.