Title :
A fully integrated high linearity transmitter in 0.18?m SiGe BiCMOS technology
Author :
Wenjie Li;Liming Lv;Zeng Rong
Author_Institution :
Institute of Electronic Engineering, China Academy of Engineering Physic, 64 Mian Shan MianYang 621900, P.R. China
Abstract :
In this paper, a transmitter with single-end input and single-end output is implemented in JAZZ 0.18μm SiGe BiCMOS technology, which contains an IF amplifier, a double balanced mixer, a balun on chip and a PA driver. Single-end input is achieved by the circuit which converts the single-ended signal to the differential signal in the IF amplifier. Single-end output is achieved by the balun on chip. In the double balance mixer, higher linearity and higher LO suppression are realized by utilizing the advantage of SiGe BiCMOS technology and the current injection at drain of transconductance stage. Test results indicate that the proposed transmitter achieves NF of 8.9dB, IM3 of 51dBc (output power is 0dBm), LO suppression of 36dBc, when an 100MHz IF signal is converted to an 2.3GHz RF signal.
Keywords :
"Transmitters","Silicon germanium","BiCMOS integrated circuits","Mixers","Impedance matching","Linearity","Transconductance"
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
DOI :
10.1109/APMC.2015.7411718