DocumentCode :
3749675
Title :
Developing graphene based MMICs on SiC substrate
Author :
O. Habibpour;N. Rorsman;H. Zirath
Author_Institution :
Chalmers University of Technology, SE-412 96, Gothenburg, Sweden
Volume :
1
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents the fabrication process development of monolithic microwave integrated circuits (MMICs) based on graphene field effect transistors (G-FETs). In this process, the G-FETs are based on epitaxial graphene on SiC substrate. Base on this process, a wide-band amplifier (0-3GHz) with 6-7 dB gain is realized.
Keywords :
"Graphene","MMICs","Substrates","Microwave amplifiers","Microwave circuits","Microwave FET integrated circuits"
Publisher :
ieee
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
Type :
conf
DOI :
10.1109/APMC.2015.7411745
Filename :
7411745
Link To Document :
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