• DocumentCode
    3749676
  • Title

    Cryogenic low noise amplifiers in an InP HEMT MMIC process

  • Author

    P. ?. Nilsson;A. Pourkabirian;J. Schleeh;N. Wadefalk;J. P. Starski;G. Alestig;J. Halonen;B. Nilsson;H. Zirath;J. Grahn

  • Author_Institution
    Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, 412 96 Gothenburg, Sweden
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4" wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
  • Keywords
    "HEMTs","Indium phosphide","III-V semiconductor materials","Cryogenics","MMICs","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7411746
  • Filename
    7411746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3749676