• DocumentCode
    3749678
  • Title

    SiGe BiCMOS VCO with 27% tuning range for 5G communications

  • Author

    Fabio Padovan;Marc Tiebout;Franz Dielacher;Andrea Bevilacqua;Andrea Neviani

  • Author_Institution
    DEI, University of Padova, Italy
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A SiGe BiCMOS VCO with a transformer-coupled varactor operating from 12 to 15.9 GHz is presented. The oscillator core features a phase noise as low as -117dBc/Hz at 1 MHz offset from the 14.2 GHz carrier while drawing 8 mA from the 3.3 V supply. The VCO shows a state-of-the-art FOMt of -190dBc/Hz. The trade-off for the technology selection is described in the introduction. The oscillator is tailored to the communication systems for the upcoming 5G applications. New radios that will operate from 6 GHz to as high as 100 GHz may be needed.
  • Keywords
    "Voltage-controlled oscillators","Silicon germanium","Phase noise","Tuning","Frequency measurement","Heterojunction bipolar transistors"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7411748
  • Filename
    7411748