Computational multiphysics method for RF and Nano electronics: Challenges and opportunities

It is well-known that both Performance and reliability of present-day RF integrated circuits (RFICs & MMICs) and even Nano electronic devices cannot be completely understood or accurately predicted from electromagnetic considerations alone. For example, the performance parameters, such as S-parameters, power handling capability and breakdown thresholds of high-density nano interconnects and RF modules are often affected by heat conduction and mechanical stresses/deformations, in extreme cases leading to electro-thermo-mechanical breakdown. Under such circumstances, predictive simulations must rely on multiphysics computational approaches as opposed to electromagnetics-only methods. There exist many challenges in developing computational algorithms for rapidly and accurately analyzing electro-thermal and electro-thermo-mechanical phenomena in RF as well as nano electronic components and circuits with complex geometries and new material properties. Most material parameters involved, such as carrier mobility, permittivity, permeability, electrical conductivity, thermal conductivity, and thermal expansion coefficients are applied field, temperature, and thermal stress dependent. On the other hand, there exist significant differences in length and time scales among electrical, thermal, and mechanical field actions. Therefore, special attention must be paid to the choice of spatial discretization and time stepping procedures to ensure convergent multiphysics solutions. This talk will address challenges and opportunities in computational multiphysics method and its application for RF and Nano electronics, with a series of examples given and demonstrated for the capability of time-domain finite element method and its implementation.