Title :
Effects of silica abrasive size on sapphire CMP performances and their removal mechanisms
Author :
Yan Zhou;Guoshim Pan;Xiaolei Shi;Hua Gong;Chunli Zou;Li Xu
Author_Institution :
State Key Laboratory of Tribology, Tsinghua University, Beijing, China
Abstract :
The effects of silica abrasive size on sapphire CMP performances have been studied. We find that MRR by 10 nm silica slurry could appear rather high, approaching to two thirds of that by 100 nm silica slurry. The removal mechanisms of sapphire using different sizes silica have been investigated using atomic force microscopy (AFM) measurements through observing the variations of atomic step morphology on the wafer surface.
Keywords :
"Silicon compounds","Atmospheric measurements","Particle measurements","Substrates","Atomic measurements"
Conference_Titel :
Planarization/CMP Technology (ICPT), 2015 International Conference on
