Investigation on cu height process control method in BEOL Cu CMP

CMP APC is well-known technology in mass manufacturing site. But each fabrication´s different device and environmental request for Engineers to takes lots of experimental time to apply for it in real process flows. In this paper, up-to-date APC application method was introduced such as in-situ CLC profile, barrier polishing time APC and dielectric measurement control method in barrier CMP. In device, 20% level of wafer-to-wafer and resistance value was improved using optimized process conditions.