Title :
Accelerated corrosion and oxidation of tungsten plug during tungsten CMP
Author :
Kyungho Hwang; Keejoon Oh; Hyunghwan Kim; Nohjung Kwak
Author_Institution :
R&D Division, SK hynix Semiconductor Inc., 2091 Gyeongchung-daero, Ami-ri, Bubal-eub, Icheon-si, Gyeonggi-do, 467-701, Republic of KOREA
Abstract :
Tungsten CMP process involves an electrochemical alteration of metal surface and mechanical removal of the modified film. Electrochemical alteration means oxidation and corrosion of tungsten surface, so some extent of tungsten dishing and recess is very natural phenomena of tungsten CMP. Recently, there have been some reports that show excessive corrosion and oxidation of tungsten plug and device failure caused by these phenomena. This excessive corrosion and oxidation of tungsten plug is far worse than the normal static etch and dishing of tungsten. These phenomena show that some other factors, not just oxidizer, accelerate the oxidation of tungsten at specific area. This study tries to explain why abnormal acceleration of corrosion and oxidation occurred, why recently this failure appeared, and how to minimize this undesirable problem and prevent it from causing device failure.
Keywords :
"Plugs","Acceleration","Oxidation","Random access memory","Chemicals"
Conference_Titel :
Planarization/CMP Technology (ICPT), 2015 International Conference on