Influence into platen and polishing pad surface temperature on removal rate in sapphire-chemical mechanical polishing

This study investigates between the removal rate and the several behavior analysis parameters in the chemical mechanical polishing (CMP) of the sapphire substrate. In particular, the platen temperature set by the chiller unit, the acceleration of a polishing head, the coefficient of friction, the polishing pad surface temperatures during the sapphire-CMP were selected as the evaluation parameters. This paper discusses the cross-relationships between the polishing pad temperature, asperity and the removal rate, and we consider the polishing mechanism of the sapphire-CMP.