Effects of surface zeta potential on the filtration behavior of colloidal abrasives

In order to reduce scratches attributed to the CMP (chemical mechanical planarization) polishing processes, defect-causing large particle counts must be reduced to improve semiconductor yields. CMP slurry filtration is considered as a critical enabler of these yield improvements. As the process technology advances, the abrasive concentrations of CMP slurries will continue to be lowered while abrasive sizes will be smaller. To respond to such changes in slurry properties, it´s imperative to reconsider slurry filtration strategies.