• DocumentCode
    3749933
  • Title

    Study on innovative plasma fusion CMP and its application to processing of diamond substrate

  • Author

    Hideaki Nishizawa;Koki Oyama;Toshiro K. Doi;Hideo Aida; Seongwoo Kim;Yasuhisa Sano;Syuhei Kurokawa;Chengwu Wan

  • Author_Institution
    Kyushu University, KASTEC, 6-1 Kasugakouen, Kasuga-shi, Fukuoka 816-8580 Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An innovative planarization system named “plasma fusion CMP” was developed for aiming to establish a high-efficiency/high-quality polishing process of the hard-to-process materials. In this study, we applied this system to processing of diamond substrate instead of conventional CMP (Chemical Mechanical Polishing) process. We confirmed that stable atmospheric plasma was generated in our dynamic system, and the system worked well even though CMP slurry was applied into the system. In the processing experiments of diamond substrate, plasma fusion CMP achieved 667.7 nm/hr of processing rate while conventional CMP resulted in only 1.9 nm/hr. Furthermore, plasma fusion CMP showed the superior surface roughness reduction of the substrate to CMP.
  • Keywords
    "Plasmas","Electrodes","Chemicals","Diamonds","Slurries","Substrates","Force"
  • Publisher
    ieee
  • Conference_Titel
    Planarization/CMP Technology (ICPT), 2015 International Conference on
  • Type

    conf

  • Filename
    7412031