Development of SiC power module using 70μm single metal layer substrates

While leadframe has come a long way as a cost effective substrate, there is still limitation over its design rule. In this article, the authors have developed and put to test a SiC based PQFN using 70μm single metal layer substrates, allowing further miniaturization and complex design of PQFN. New high temperature EMC with a Tg of 241°C and lead free bismuth silver solder are adopted. Reliability tests and RDS,on results showed that the materials adopted in the development does not degrade the MOSFET´s functionality and all samples passed reliability and power cycling tests.