Title :
Low temperature Si-Si bonding process design based on plasma surface treatment
Author :
Wang Xiaoguang;Li Yuling;Qi Hong
Author_Institution :
Engineering Center of Chip and Microsystem, 49th Research Institute of CETC, Harbin, China
Abstract :
Focused on the plasma pretreatment process, low temperature silicon-silicon bonding process is designed under a variety of atmosphere. Strength stable silicon-silicon bonding without annealing cavities is realized. Leak rate of samples is less than 1.0×10-10Pa · m3 / s, the bonding strength is greater than 20MPa / m3, is very close to the strength of the bulk silicon. This process is able to satisfy the application requirements in MEMS, semiconductor and MMIC.
Keywords :
"Bonding","Decision support systems","Plasma temperature","Atmosphere","Annealing"
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
DOI :
10.1109/APMC.2015.7413147
