• DocumentCode
    3750685
  • Title

    A 200 GHz driver amplifier in metamorphic HEMT technology

  • Author

    B. Amado-Rey;Y. Campos-Roca;S. Maroldt;A. Tessmann;H. Massler;A. Leuther;M. Schlechtweg;O. Ambacher

  • Author_Institution
    Fraunhofer Institute for Applied Solid State Physics (IAF), Tulllastrasse 72, 79108 Freiburg, Germany
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A driver amplifier operating at 200 GHz has been design and manufactured with compact size, high gain, broadband performance and high power added efficiency (PAE). This monolithic microwave integrated circuit (MMIC) is realized in grounded coplanar waveguides (GCPW) technology in conjunction with a 35 nm gate length metamorphic high electron mobility transistor technology (mHEMT). The four-stage driver amplifier provides more than 20 dB linear gain between 180 GHz and 270 GHz (40 % bandwidth) and PAE higher than 3.3% with more than 7.4 dBm saturated output power at 200 GHz.
  • Keywords
    "Decision support systems","Microwave circuits","Gain","MMICs","Conferences"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413203
  • Filename
    7413203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3750685